发明名称 DOUBLE-SIDED HETEROJUNCTION SOLAR CELL BASED ON THIN EPITAXIAL SILICON
摘要 One embodiment of the present invention provides a double-sided heterojunction solar cell. The solar cell includes a lightly doped epitaxial crystalline Si (c-Si) base layer, a front-side passivation layer situated on the front side of the lightly doped epitaxial c-Si base layer, a back-side passivation layer situated on the back side of the lightly doped epitaxial c-Si base layer, a front-side emitter situated on the surface of the front-side passivation layer, a back surface field (BSF) layer situated on the surface of the back-side passivation layer, a front-side electrode, and a back-side electrode.
申请公布号 US2011068367(A1) 申请公布日期 2011.03.24
申请号 US20100881010 申请日期 2010.09.13
申请人 SIERRA SOLAR POWER, INC. 发明人 HENG JIUNN BENJAMIN;YU CHENTAO;XU ZHENG;KOMROWSKI ANDREW
分类号 H01L31/0264;H01L21/20 主分类号 H01L31/0264
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