发明名称 |
Einkristall-Wachstumsverfahren und Einkristall-Ziehvorrichtung |
摘要 |
<p>A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.</p> |
申请公布号 |
DE112009000986(T5) |
申请公布日期 |
2011.03.24 |
申请号 |
DE20091100986T |
申请日期 |
2009.03.24 |
申请人 |
SHIN-ETSU HANDOTAI CO. LTD. |
发明人 |
SUGAWARA, KOSEI;HOSHI, RYOJI;TAKAZAWA, MASANORI;MIYAHARA, YUUICHI;IWASAKI, ATSUSHI |
分类号 |
C30B29/06;C30B15/00;C30B15/10 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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