| 摘要 |
<p>A semiconductor substrate (80) includes: a circuit pattern region (30) having a circuit pattern involved in a circuit operation; an active area (60) formed in the circuit pattern region (30); and a dummy pattern (77) formed in the active area (60) and at a position 10 µm to 11 µm inclusive from the edge of the active area (60), having a pitch of 10 nm to 510 nm inclusive, and having a plurality of dummy gates not involved in the circuit operation. When performing laser spike annealing in which light having a wavelength of 10 µm to 11 µm inclusive is irradiated to the main surface of the semiconductor substrate (80), the angle between the arrangement direction of the dummy gates and the projection direction of the light is set to 0° to 30° inclusive.</p> |
