发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP |
摘要 |
A semiconductor light-emitting device (1) of the present invention includes a substrate (101); a laminate semiconductor layer (20) formed by sequentially laminating an n-type semiconductor layer (104), a light-emitting layer (105), and a p-type semiconductor layer (106) on the substrate (101); and a translucent electrode layer (109) formed on a top surface (106a) of the p-type semiconductor layer (106), wherein the translucent electrode layer (109) contains a dopant element, a content of the dopant element within the translucent electrode layer (109) decreases gradually toward the interface (109a) between the p-type semiconductor layer (106) and the translucent electrode layer (109), and in the translucent electrode layer (109) is formed a diffusion region in which an element constituting the p-type semiconductor layer (106) is diffused from the interface (109a) toward the inside of the translucent electrode layer (109).
|
申请公布号 |
US2011068349(A1) |
申请公布日期 |
2011.03.24 |
申请号 |
US20090993733 |
申请日期 |
2009.05.20 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
SHINOHARA HIRONAO;FUKUNAGA NAOKI |
分类号 |
H01L33/42;H01L21/28;H01L21/329;H01L29/47;H01L29/872;H01L33/06;H01L33/10;H01L33/16;H01L33/30;H01L33/32;H01L33/36 |
主分类号 |
H01L33/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|