发明名称 |
DEVICES, STRUCTURES, AND METHODS USING SELF-ALIGNED RESISTIVE SOURCE EXTENSIONS |
摘要 |
Devices, structures, and related methods for IGBTs and the like which include a self-aligned series resistance at the source-body junction to avoid latchup. The series resistance is achieved by using a charged dielectric, and/or by using a dielectric which provides a source of dopant atoms of the same conductivity type as the source region, at a sidewall adjacent to the source region. |
申请公布号 |
WO2011035331(A2) |
申请公布日期 |
2011.03.24 |
申请号 |
WO2010US49716 |
申请日期 |
2010.09.21 |
申请人 |
BLANCHARD, RICHARD, A.;DARWISH, MOHAMED, N.;ZENG, JUN;MAXPOWER SEMICONDUCTOR INC. |
发明人 |
BLANCHARD, RICHARD, A.;DARWISH, MOHAMED, N.;ZENG, JUN |
分类号 |
H01L29/73;H01L29/732;H01L29/78 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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