METHOD FOR MANUFACTURING BODY CONTAINING SEMICONDUCTOR MATERIAL HAVING REDUCED MEAN FREE PATH LENGTH, AND THE BODY MANUFACTURED USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a body (1) containing doped semiconductor material having a specific mean free path length (λn) for free charge carriers (CP), and a mean free path length (λr) for the free charge carriers (CP) smaller than the specific mean free path length (λn).

SOLUTION: In this method, an epitaxial crystal layer (20) containing doped semiconductor material is produced on a substrate crystal (10) containing semiconductor material having the specific mean free path length (λn). The epitaxial crystal layer has, at least locally, a mean free path length (λr) for the free charge carriers (CP) smaller than the specific mean free path length (λn). The body (1) can be manufactured by joining two crystal bodies (10', 10'') containing doped semiconductor material to each other.

COPYRIGHT: (C)2011,JPO&INPIT