| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving a characteristic and reliability of a high-voltage transistor used in a peripheral circuit region of a nonvolatile semiconductor storage device. SOLUTION: The method of manufacturing a semiconductor device includes steps of: forming, on a silicon substrate 3, a gate insulating film 29 for a high-voltage HVTr of a peripheral circuit; forming, on the gate insulating film 29, a gate electrode HVG; peeling off the gate insulating film 29 positioned on the silicon substrate 3 on both side portions of the gate electrode HVG; forming an impurity diffusion region 30; depositing a silicon oxide film to extend over surfaces of the gate electrode HVG and the impurity diffusion region 30; etching the silicon oxide film to form a spacer 22 to be formed on a sidewall portion of the gate electrode HVG and extend over the surface of the silicon substrate 3; and forming a silicon nitride film 23 on a surface of the spacer 22. COPYRIGHT: (C)2011,JPO&INPIT
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