| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a laminated substrate, which, when implanting ions on the major surface of a group III nitride semiconductor substrate, hardly damages the major surface. SOLUTION: The method for manufacturing the laminated substrate 10, includes the steps of: forming a protective film 4 on the major surface 2a of the group III nitride semiconductor substrate 2; forming a vulnerable area f in the group III nitride semiconductor substrate 2 by implanting ions on the major surface 2a of the group III nitride semiconductor substrate 2 through the protective film 4; laminating the major surface 2a of the group III nitride semiconductor substrate 2 on a support substrate 6; and a part 2c of the group III nitride semiconductor substrate 2 is peeled from the support substrate 6 using the vulnerable area f as a boundary. COPYRIGHT: (C)2011,JPO&INPIT
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