| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-quality pn-type Ga<SB>2</SB>O<SB>3</SB>capable of forming a thin film formed of a Ga<SB>2</SB>O<SB>3</SB>-based compound semiconductor. <P>SOLUTION: The inside of a vacuum layer 52 is depressurized; a cell 55a is heated while injecting an oxygen radical therein; a molecular beam 90 of Ga and a cell 55b are heated; and a surface of a substrate 25 formed of a Ga<SB>2</SB>O<SB>3</SB>-based compound is irradiated with a molecular beam 90 of Mg to grow a p-type β-Ga<SB>2</SB>O<SB>3</SB>layer formed of p-type β-Ga<SB>2</SB>O<SB>3</SB>on the substrate 25. <P>COPYRIGHT: (C)2011,JPO&INPIT |
