| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor improved in a mobility characteristic and productivity, and to provide a high-performance display device using the same. SOLUTION: This display device includes a thin-film transistor including, on a substrate, a gate electrode, a gate insulation film, a semiconductor film, a contact film, and a pair of electrodes functioning as a source electrode and a drain electrode, wherein the contact film is located between the semiconductor film and the source electrode or the drain electrode. In the display device, the contact film contains Si as a main constituent, and the peak of concentration of group III or group V impurities in the contact film is separated from an interface between the contact film, and the source electrode and the drain electrode by 3 nm or more, or the concentration of the impurities is increased on the semiconductor film side. COPYRIGHT: (C)2011,JPO&INPIT |
