| 摘要 |
A semiconductor memory device includes a memory cell array, a word line driver, and a bit line booster. The memory cell array has multiple word lines WL, multiple bit line pairs BL, and multiple memory cells MC provided at the respective intersections of the word lines WL and the bit line pairs BL. The word line driver drives a selected word line WL to a positive voltage VWL when data is written to the memory cells MC. The bit line booster drives a selected bit line pair BL to a negative voltage VBL corresponding to the voltage VWL when data is written to the memory cells MC.
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