Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions,申请号GB20080017592-传众专利搜索

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发明名称	Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions
摘要
申请公布号	GB2449824(B)	申请公布日期	2011.03.23
申请号	GB20080017592	申请日期	2007.02.21
申请人	ADVANCED MICRO DEVICES, INC	发明人	ANDY WEI;THORSTEN KAMMLER;JAN HOENTSCHEL;MANFRED HORSTMANN;PETER JAVORKA;JOE BLOOMQUIST
分类号	H01L21/336;H01L29/165;H01L29/78	主分类号	H01L21/336
代理机构		代理人
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