| 摘要 |
<p>PURPOSE: A photo-resist composition and a method for manufacturing a photo-resist pattern using the same are provided to obtain a photo-resist pattern with a superior mask error enhancement factor. CONSTITUTION: A photo-resist composition includes a resin, an acid generator, and a compound represented by chemical formula 1. In the chemical formula 1, Ra1, R2, and R3 are respectively hydrogen or C1-C4 alkyl group. A1 is a single bond or C1-C2 alkylene group. R4 and R5 are respectively hydrogen or C1-C2 alkyl group. R6 and R7 are respectively hydrogen or C3-C20 hydrocarbon group. R6 and R7 are bonded with nitrogen atom combined with the R6 and the R7 in order to form C2-C12 hetero cycle.</p> |
