发明名称 Sputtering target with few surface defects, and surface processing method thereof
摘要 Provided is a surface processing method of a sputtering target, wherein a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50% is preliminarily subject to the primary processing of cutting work, then subsequently subject to finish processing via polishing. The sputtering target subject to this surface processing method is able to improve the target surface having numerous substances without ductility, and prevent or suppress the generation of nodules and particles upon sputtering.
申请公布号 US7909949(B2) 申请公布日期 2011.03.22
申请号 US20050598502 申请日期 2005.02.15
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 NAKAMURA YUICHIRO;HISANO AKIRA
分类号 C22F1/16;C22C19/07;C23C14/34;H01L21/285 主分类号 C22F1/16
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