| 摘要 |
A semiconductor device including a silicon substrate and a field effect transistor including a gate insulating film on the silicon substrate, a gate electrode on the gate insulating film, and source/drain regions formed in the substrate on opposite sides of the gate electrode, wherein the gate electrode includes a silicide layer containing an Ni3Si crystal phase, at least in a portion of the gate electrode, the portion including a lower surface thereof, and the transistor includes an adhesion layer containing a metal oxide component, between the gate insulating film and the gate electrode.
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