SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD

摘要

PURPOSE: A semiconductor memory apparatus and a manufacturing method thereof are provided to improve the leadout margin by forming the bigger current of the driver transistor by setting the silicon layer of the driver transistor. CONSTITUTION: A first storage node is formed by a first p+ diffusion layer and a first n+ diffusion layer(104a). A second storage node is formed by a second p+ diffusion layer and a second n+ diffusion layer(104b). A first leak prevention diffusion layer(101b) is formed between a first well(101a) and a first n+ diffusion layer. The first leak prevention diffusion layer prevents the leakage between the first n+ diffusion layer or the first p+ diffusion layer and the first well.