| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of evaluating electric performances of an FDSOI transistor that can be directly applied to the FDSOI transistor without the need of a special testing structure that is required by methods based on conventional technology. <P>SOLUTION: The method includes the steps of: measuring a capacitance and/or conductance of the FDSOI transistor, by applying a voltage V<SB>BG</SB>>0 or V<SB>BG</SB><0 on the substrate 3, depending on a voltage V<SB>FG</SB>applied on the gate 15; calculating the theoretical values of the capacitance and/or the conductance of a transistor modeled by an electric circuit equivalent to the FDSOI transistor, for selected theoretical values of defect densities D<SB>it1</SB>, D<SB>it2</SB>at the dielectric-semiconductor interfaces of the modeled transistor; and determining the real values of D<SB>it1</SB>, D<SB>it2</SB>at the corresponding interfaces of the FDSOI transistor by a comparison between the measured values of the capacitance and/or the conductance of the FDSOI transistor and the theoretical values of the capacitance and/or the conductance of the modeled transistor. <P>COPYRIGHT: (C)2011,JPO&INPIT |
