发明名称 |
PHOTOSENSITIVE COMPOUND AND PHOTOSENSITIVE COMPOSITION INCLUDING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photosensitive compound that has excellent sensitivity and also improves residual film ratio characteristics, and to provide a photosensitive composition including the photosensitive compound that improves perpendicularity of a pattern created after a semiconductor photolithography process. <P>SOLUTION: The photosensitive compound contains a naphthoquinonediazide sulfonic acid ester compound having at least one naphthoquinonediazide sulfoxy group (-ODNQ), and having either at least one carboxyl group or alkoxy group having 1 to 8 carbon atoms, in one molecule. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011053639(A) |
申请公布日期 |
2011.03.17 |
申请号 |
JP20100012846 |
申请日期 |
2010.01.25 |
申请人 |
KOREA KUMHO PETROCHEMICAL CO LTD |
发明人 |
PARK JOO HYEON;KANG SEOK CHAN;CHO JUNG HWAN;SON KYUNG CHUL |
分类号 |
G03F7/022;G03F7/023;H01L21/027 |
主分类号 |
G03F7/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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