| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device increasing the reliability by reducing optical damages while maintaining high operational characteristics. SOLUTION: The element includes a first conductivity type first semiconductor layer 10, a second conductivity type second semiconductor layer 20, a light-emitting layer 30 between them, a first electrode 40 in contact with the first conductor layer, and a second electrode 50 in contact with the second semiconductor layer. Light resonates between first and second end surfaces S1, S2 facing each other in a first direction vertical to a lamination direction. The second semiconductor layer includes: a ridge part RP disposed between the first and second end faces and having a width along a second direction vertical to the first direction and the lamination direction, the width being narrower on the side of the second electrode than on the side of the light-emitting layer; and a wide-width part WP formed in contact with at least one of the first and second end faces and having a width along the second direction on the side of the second electrode, the width being wider than that of the ridge part. The second electrode on the wide-width part has a part having a width along the second direction, which is narrower than that of the second electrode on the ridge part. COPYRIGHT: (C)2011,JPO&INPIT
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