| 摘要 |
In the present invention, a thin film transistor is formed on a plastic film substrate (1) having anisotropy of thermal shrinkage rate or coefficient of thermal expansion in in-plane directions of the substrate. A channel is formed such that the direction (7) in which the thermal shrinkage rate or the coefficient of thermal expansion of the substrate is largest is nonparallel to the direction (8) of a current flowing through the channel of the thin film transistor. Then, a thin film transistor having stable and uniform electrical characteristics, which is formed on the plastic film substrate, is provided.
|
