| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for stably manufacturing an SiC single crystal substrate having high flatness and high quality suitable as a substrate for a light emitting device and an electronic device. SOLUTION: In a method for manufacturing the SiC single crystal by which a substrate 1 for crystal growth is immersed in a raw material solution 5 wherein C is solved in a melted liquid made of an alloy of Si or Si and other metal and the solution 5 at least in the vicinity of the substrate 1 is made to be in a supersaturated state to grow the SiC single crystal on the substrate 1, the SiC single crystal is made to grow while oxygen is incorporated into the raw material solution 5 by at least one method of (1) the material of the melted liquid contains at least one oxide, (2) crystal growth is performed under an inert gas atmosphere containing oxygen and (3) crystal growth is performed while an inert gas containing oxygen is blown into the raw material solution. COPYRIGHT: (C)2011,JPO&INPIT
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