| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem that a GaN based semiconductor laser capable of performing a single transverse mode operation stable in a low-threshold current operation cannot be performed because confinement of light in a horizontal transverse mode is insufficient. <P>SOLUTION: A structure is used in which, after an opening 25 in a shape of a stripe penetrating a current constriction layer 24 is formed, a laser crystal layer including an active layer 28 is grown by using a dielectric such as SiO<SB>2</SB>as the current constriction layer. It is possible to form a waveguide of an effective refractive index type or a loss type excellent in confinement of light due to properties of light absorption and a low refractive index of the current constriction layer 24, and therefore, it is possible to obtain a GaN based semiconductor laser of a single transverse mode type by the refractive index waveguide stable in low-threshold current density. <P>COPYRIGHT: (C)2011,JPO&INPIT |
