发明名称 |
SELF-ASSEMBLY OF LITHOGRAPHICALLY PATTERNED POLYHEDRAL NANOSTRUCTURES AND FORMATION OF CURVING NANOSTRUCTURES |
摘要 |
The self-assembly of polyhedral nanostructures having at least one dimension of about 100 nm to about 900 nm with electron-beam lithographically patterned surfaces is provided. The presently disclosed three-dimensional nanostructures spontaneous assemble from two-dimensional, tethered panels during plasma or wet chemical etching of the underlying silicon substrate. Any desired surface pattern with a width as small as fifteen nanometers can be precisely defined in all three dimensions. The formation of curving, continuous nanostructures using extrinsic stress also is disclosed. |
申请公布号 |
WO2010129319(A3) |
申请公布日期 |
2011.03.17 |
申请号 |
WO2010US32696 |
申请日期 |
2010.04.28 |
申请人 |
THE JOHNS HOPKINS UNIVERSITY;GRACIAS, DAVID H.;CHO, JEONG-HYUN |
发明人 |
GRACIAS, DAVID H.;CHO, JEONG-HYUN |
分类号 |
B82B1/00;B82B3/00;G03F7/00 |
主分类号 |
B82B1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|