发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, the method preventing the occurrence of interfacial delamination between a release layer and insulating layer of a lowermost interposing layer in (an assembly including) the manufacturing of an interposer and the mounting of a semiconductor chip. SOLUTION: The release layer 2 composed of a thermoplastic resin is formed on a support substrate 1, and the insulating layer 3 composed of the thermoplastic resin containing solvent to solve the thermoplastic resin used for forming the release layer 2 is formed on the release layer 2. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011054852(A) 申请公布日期 2011.03.17
申请号 JP20090204082 申请日期 2009.09.03
申请人 TOSHIBA CORP 发明人 MIURA MASAYUKI;HONMA SOICHI;SHIMA SHINYA
分类号 H01L23/32 主分类号 H01L23/32
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