发明名称 |
MASK PATTERN DETERMINING METHOD, MASK MANUFACTURING METHOD, AND DEVICE MANUFACTURING METHOD |
摘要 |
According to one embodiment, a mask pattern determining method includes a mask-pattern dimension variation amount of a first photomask is derived. Moreover, a correspondence relationship between a target dimension value of an on-substrate test pattern formed by using a second photomask and a dimension allowable variation amount of a mask pattern formed on the second photomask is derived. Then, it is determined whether pattern formation is possible with a pattern dimension that needs to be formed when performing the pattern formation on a substrate by using the first photomask based on the mask-pattern dimension variation amount and the correspondence relationship.
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申请公布号 |
US2011065030(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20100880507 |
申请日期 |
2010.09.13 |
申请人 |
KOTANI TOSHIYA;NAKAJIMA FUMIHARU;ABURADA RYOTA;TAGUCHI TAKAFUMI;MASHITA HIROMITSU;TAKIMOTO MICHIYA;KODAMA CHIKAAKI |
发明人 |
KOTANI TOSHIYA;NAKAJIMA FUMIHARU;ABURADA RYOTA;TAGUCHI TAKAFUMI;MASHITA HIROMITSU;TAKIMOTO MICHIYA;KODAMA CHIKAAKI |
分类号 |
G03F7/20;G03F1/84;G06F17/50;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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