摘要 |
A Group III nitride semiconductor light-emitting device includes an electrically conductive support; a p-electrode provided on the support; a p-type layer, an active layer, and an n-type layer, which are formed of a Group III nitride semiconductor and are sequentially provided on the p-electrode; an n-electrode which is connected to the n-type layer; a first trench extending from the surface of the p-type layer on the p-electrode's side to reach the n-type layer; an auxiliary electrode which is in contact with the surface of the n-type layer serving as the bottom of the first trench, but is not in contact with the side walls of the first trench; and an insulating film which exhibits light permeability and covers the auxiliary electrode and the bottom and side walls of the first trench.
|