| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem of readiness in occurrence of collapse of a high aspect ratio lower electrode by etching. SOLUTION: A method of manufacturing a semiconductor device of, after the step of forming, on a plurality of first cylindrical lower electrodes 9, a first beam 10a joining with upper ends of the first lower electrodes 9 and coupling together the first lower electrodes 9, repeating at least one or more times the step of forming a second interlayer insulating film 11 to cover the first beam 10 and thereafter forming a plurality of second cylindrical lower electrodes 12 passing through the second interlayer insulating film 11 while leaving a space between respective first lower electrodes 9, the step of forming a second beam 13a joining with upper ends of the second lower electrodes 12 and coupling together the plurality of second lower electrodes 12 on the second interlayer insulating film 11, and the step of forming the second interlayer insulating film 11. COPYRIGHT: (C)2011,JPO&INPIT
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