| 摘要 |
1,266,243. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 14 Oct., 1969 [30 Dec., 1968], No. 50404/69. Heading H1K. A process for manufacturing a metal insulator semi-conductor FET comprises the following steps: a doped silicon dioxide layer is formed on an oppositely doped silicon substrate 11, the layer subsequently being partially removed to form two spaced bodies 13a, 13b, a film 15 of silicon nitride is deposited over the substrate surface and then the film 15 is removed from the area between the bodies, followed by the removal from this area of a thin layer of the substrate, a silicon dioxide layer 19 is formed on the area by heating in an oxygen atmosphere, and a second silicon nitride film 21 deposited over the substrate surface; the source and drain regions 23a, 23b are formed by diffusing the impurities from the bodies 13a, 13b into substrate 11. Windows are etched subsequently through the nitride films and the blocks to the substrate layer, metallizations 27a, 27b subsequently being deposited in these windows to form the source and drain electrodes, and metallization 29 forming the gate electrode. The source and drain dopant may be boron, and an anodic etch may be used to remove the desired area of the silicon nitride film 15. The steps of removing the thin layer of silicon substrate in the area between the blocks, forming the layer of silicon dioxide on this area, and the second silicon nitride film, may all be carried out sequentially within the same reactor tube. |
