Semiconductor device having reduced thermal interface material (TIM) degradation and method therefor

摘要

A semiconductor device has a substrate having a top and bottom surface and a plurality of metal layers. A first die is electrically coupled to the top surface of the substrate. A lid member is attached to a top surface of the die and to the top surface of the substrate. A layering is formed on portions of a top surface of the lid member. The layering will have a different coefficient of thermal expansion (CTE) than the lid member.