摘要 |
<p>PURPOSE: A light emitting diode including wavelength conversion posts and a manufacturing method thereof are provided to reduce manufacturing time of the light emitting diode through wavelength conversion materials by forming the wavelength conversion materials on the upper, lower and lateral sides of a light emitting structure in a fab process. CONSTITUTION: A light emitting structure(S) is arranged on the upper side of a first semiconductor layer(12) of a substrate(10). The light emitting structure includes a second semiconductor layer(16) which exposes the part of the upper side of the first semiconductor layer. A first electrode(22) and a second electrode(24) are arranged on the upper side of the first and second semiconductor layers. A light transmitting protection layer(26) is arranged on the substrate except the first and second electrodes. A wavelength conversion post(32) is arranged on the light transmitting protection layer and a plurality of penetration holes which pass through the edges of the substrate.</p> |