发明名称 Semiconductor device having plural semiconductor chips laminated to each other
摘要 In a stacked semiconductor device in which a plurality of through silicon vias used for data transfer are shared among a plurality of semiconductor chips, a first semiconductor chip included in the semiconductor chips holds through silicon via switching information for specifying a through silicon via among the through silicon vias to be used for data transfer, and transfers the through silicon via switching information to a second semiconductor chip included in the semiconductor chips. According to the present invention, because the through silicon via switching information is transferred from the first semiconductor chip to the second semiconductor chip, a circuit for storing the through silicon via switching information in a nonvolatile manner is not required in the second semiconductor chip. With this arrangement, a chip area of the second semiconductor chip can be reduced.
申请公布号 US2011057819(A1) 申请公布日期 2011.03.10
申请号 US20100923826 申请日期 2010.10.08
申请人 ELPIDA MEMORY, INC. 发明人 IDE AKIRA;TAKISHITA RYUJI
分类号 H03M9/00;H01L23/48;H01L25/00 主分类号 H03M9/00
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