| 摘要 |
PROBLEM TO BE SOLVED: To achieve a barrier metal layer having improved adhesive strength with Au wiring and exhibiting excellent thermal stability in a semiconductor device, and to achieve improvement in the characteristics and in the yield. SOLUTION: The semiconductor device includes electrodes 9 and 10 having an Al layer 8, the Au wiring 12, and the barrier metal layer 11 provided between the Al layer 8 and the Au wiring 12 and having a structure wherein a first Ta layer 14, a first TaN layer 15 and a first Pt layer 16 are sequentially laminated from the side of the Al layer 8. COPYRIGHT: (C)2011,JPO&INPIT |
