| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of uniformly performing plasma processing of a wafer surface by overcoming the problem, wherein although a silicon wafer is mounted between electrodes and ac power of high frequency is applied between the electrodes to perform the plasma processing of wafer in a plasma processing apparatus, there is an wafer between the electrodes so that plasma is not uniform. <P>SOLUTION: The substrate processing apparatus includes: a reaction chamber 1 for processing a substrate 5; a substrate mounting means 22 for mounting a plurality of substrates 5 while stacking in multistage with predetermined intervals in the reaction chamber 1; a means 10 for introducing a processing gas into the reaction chamber 1; exhaust means 6 and 7 for exhausting inside of the reaction chamber 1, and a plurality of pairs of ac power applying comb-shaped electrodes for generating the plasma provided in the reaction chamber 1. In the substrate processing apparatus, each pair of the plurality of pairs of comb-shaped electrodes is arranged, respectively, at a predetermined distance from each plasma processing surface of the plurality of substrates 5 mounted on the substrate mounting means 22. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
