| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a yield rate is improved. SOLUTION: The method includes forming a surface structure of a semiconductor element on a surface layer of a first main surface of a semiconductor substrate, forming a back electrode on a surface layer of a second main surface of the semiconductor substrate, and fixing a sheet having conductivity and elasticity on the back electrode layer. The sheet includes a resin layer, a metal layer formed on the resin layer, and an adhesive layer containing metal powder on the metal layer so that the adhesive layer adheres to the back electrode. Consequently, occurrence of damages to the back electrode of the semiconductor element can be prevented, and the productivity of the semiconductor device having the semiconductor element can be improved. COPYRIGHT: (C)2011,JPO&INPIT |
