METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having achieved formation of a capacitor insulating film having high permittivity and stable in a high-temperature condition. SOLUTION: This method of manufacturing the semiconductor device includes: a first process of forming an amorphous first insulating film containing a first element on a substrate; a second process of adding a second element different from the first element to the first insulating film to form an amorphous second insulating film on the substrate; and a third process of annealing the second insulating film at a predetermined annealing temperature to be subjected to phase transition into a third insulating film. The addition concentration of the second element is controlled according to the annealing temperature. COPYRIGHT: (C)2011,JPO&INPIT