Halbleiterlaser mit aktiver Schicht in Quantentopstruktur, dessen Verwendungsverfahren, diesen beinhaltendes Lichtquellengerät sowie diesen verwendendes optisches Kommunikationssystem.

摘要

An optical semiconductor device includes a substrate and an active region formed on the substrate. The active region includes a plurality of quantum well layers containing at least one tensile-strained well layer, and the plurality of quantum well layers include a plurality of quantum well layers whose band gaps are different from each other. Such an active region makes it possible to expand a wavelength range over which TE-mode and TM-mode gains balance with each other or are approximately equal to each other.