| 发明名称 |
METHOD FOR FORMING Co FILM |
| 摘要 |
<p>Disclosed is a method for forming a Co film, by which a Co film is formed on an Si base surface using cobalt alkyl amidinate together with a reducing gas that is selected from among NH3, N2H4, NH(CH3)2, N2H3CH and N2, or together with a combination of H2 and the reducing gas.</p> |
| 申请公布号 |
WO2011027835(A1) |
申请公布日期 |
2011.03.10 |
| 申请号 |
WO2010JP65064 |
申请日期 |
2010.09.02 |
| 申请人 |
ULVAC, INC.;KUMAMOTO, SHOICHIRO;TOYODA, SATORU;USHIKAWA, HARUNORI |
发明人 |
KUMAMOTO, SHOICHIRO;TOYODA, SATORU;USHIKAWA, HARUNORI |
| 分类号 |
C23C16/18;H01L21/28;H01L21/285 |
主分类号 |
C23C16/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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