| 摘要 |
PROBLEM TO BE SOLVED: To overcome the problem in a conventional charge pump circuit mounted to a semiconductor device, wherein the current drive capacity is lowered. SOLUTION: The semiconductor device includes a first charge pump circuit 11 which creates a first control signal on the basis of electric charges of a first pumping capacitor C1 which are accumulated via a first drive transistor P11, a second charge pump circuit 12 which creates a second control signal on the basis of electric charges of a second pumping capacitor C2 which are accumulated via a second drive transistor P21, a third charge pump circuit 13 which receives and transmits electric charges between a terminal OUT and a terminal VSS via a third drive transistor P32; and a forth charge pump circuit 14 which receives and transmits the electric charges between the terminal OUT and the terminal VSS via a fourth drive transistor P42. The first and third drive transistors are controlled in conduction states on the basis of the second control signal, and the second and fourth drive transistors are controlled in conduction states on the basis of the first control signal. COPYRIGHT: (C)2011,JPO&INPIT
|
