| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a (co)polymer for a resist giving high sensitivity and/or resolution, when used in DUV excimer laser lithography, electron beam lithography or the like. <P>SOLUTION: The (co)polymer for the resist contains a monomer unit having an alicyclic skeleton or a monomer unit having a lactone skeleton, and does not contain a molecular terminal group expressed by formula (1) in a molecular terminal, where R<SP>1</SP>and R<SP>2</SP>represent respectively H, a 1-10C alkyl group, -COO-R<SP>A</SP>, -X-COO-R<SP>A</SP>, -CONR<SP>B</SP>-R<SP>A</SP>, -X-CONR<SP>B</SP>-R<SP>A</SP>, -NR<SP>B</SP>-R<SP>A</SP>or -X-NR<SP>B</SP>-R<SP>A</SP>, R<SP>3</SP>represents cyano group or a 2-10C cyano alkyl group, X represents a 1-10C alkylene group, and R<SP>A</SP>and R<SP>B</SP>represent respectively H or a 1-10C alkyl group. <P>COPYRIGHT: (C)2011,JPO&INPIT |
