SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SPUTTERING TARGET USED FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide: a semiconductor device capable of preventing increase of a resistance value of a wire due to barrier film formation and the occurrence of a void; a method of manufacturing the same; and a sputtering target used for the same. SOLUTION: The semiconductor device with a wire of Cu formed on an insulating film 1 containing a Si oxide includes a barrier film 4 formed on an inner surface of a groove-like opening 1a formed on the insulating film 1, and a wire body 2 located in the opening 1a, formed on the barrier film 4, and formed of Cu. In the barrier film 4, the barrier film 4 has a Cu alloy base layer formed at least on the insulating film 1 and containing at least either of a Ba oxide and a Sr oxide, and at least either of a BaSi oxide and the SrSi oxide is segregated on an interface between the Cu alloy base layer and the insulating film 1. COPYRIGHT: (C)2011,JPO&INPIT