发明名称 |
THERMALLY SHIELDED RESISTIVE MEMORY ELEMENT FOR LOW PROGRAMMING CURRENT |
摘要 |
Various embodiments described herein provide a memory device including a variable resistance material having a thermally isolating and electrically conductive isolation region arranged between the variable resistance material and an electrode to allow for efficient heating of the variable resistance material by a programming current. An electrically and thermally isolating isolation region may be arranged around the variable resistance material.
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申请公布号 |
US2011057161(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20090557315 |
申请日期 |
2009.09.10 |
申请人 |
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发明人 |
SANDHU GURTEJ;SMYTHE JOHN;LIU JUN |
分类号 |
H01L47/00;H01L21/06 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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