| 摘要 |
PROBLEM TO BE SOLVED: To enhance the rate of relieving write errors occurring in a nonvolatile memory system with time. SOLUTION: A nonvolatile memory system includes a plurality of nonvolatile memory devices (FLS1-FLS16) and a controller (CTR). The controller, when detecting a write error in a nonvolatile memory being an operation target, can set inter-chip substitution information indicating that a memory area related to the write error has been substituted with the memory area of another nonvolatile memory device out of the plurality of nonvolatile memory devices, to the nonvolatile memory device having the memory area related to the error and when obtaining the inter-chip substitution information from the nonvolatile memory device of the operation target, can change another nonvolatile memory device indicated by the inter-chip substitution information, to the operation target. Furthermore, the inter-chip substitution is possible for all of the plurality of nonvolatile memory devices. COPYRIGHT: (C)2011,JPO&INPIT
|
