| 摘要 |
PROBLEM TO BE SOLVED: To provide a display device which can set the gate insulating film of a thin film transistor and the dielectric film of a capacitive element to have film thickness corresponding to their characteristics by using an insulating film in a different layer without increasing manufacturing man-hours. SOLUTION: In the display device in which the thin film transistor and the capacitive element are formed on a substrate, the thin film transistor includes: a first insulating film formed to cover over a gate electrode formed area; a second insulating film formed on the first insulating film, and equipped with an opening in the gate electrode formed area in plan view; an island-like poly-crystallized semiconductor layer formed crossing the opening on the second insulating film and equipped with high-density areas at both ends; a third insulating film formed on the upper surface of the semiconductor layer to expose a part of each of the high-density areas at both ends of the semiconductor layer; and a pair of electrodes formed by being electrically connected to each of the high-density areas at both ends of the semiconductor layer exposed from the third insulating film. In the capacitive element, its dielectric film is composed of the insulating film in the same layer and of the same material as the third insulating film. COPYRIGHT: (C)2011,JPO&INPIT |
