| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching apparatus and a plasma processing method, for uniform etching processes from the central part in a wafer plane to edge part, by solving the problem of degradation in rate in a wafer edge part. SOLUTION: The plasma processing apparatus performs a plasma process with a substrate W placed on a sample stage by supplying fluorocarbon based gas in a vacuum vessel 1. It is equipped with: a focus ring 7 arranged on the periphery of the substrate W; and a first supply means 2B and a second supply 2A which supply different gasses to the central part and the peripheral part of the substrate W. Different kinds of fluorocarbon based gasses are supplied from the first supply means 2B and the second supply means 2A to the central part and the outer peripheral part of the substrate W. Such fluorocarbon based gas as has a lower rate between carbon and fluorine (C/F ratio) than the central part of the substrate W, is supplied to the outer peripheral part of the substrate W. COPYRIGHT: (C)2011,JPO&INPIT
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