| 发明名称 |
OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE |
| 摘要 |
<p>Disclosed are: an oxide semiconductor which enables the production of a thin film transistor having excellent electrical properties and excellent reliability; a thin film transistor provided with a channel layer formed using the oxide semiconductor; and a display device provided with the thin film transistor. The oxide semiconductor can be used for a thin film transistor, and contains Si, In, Zn and O as the constituent atoms.</p> |
| 申请公布号 |
WO2011027591(A1) |
申请公布日期 |
2011.03.10 |
| 申请号 |
WO2010JP57777 |
申请日期 |
2010.05.06 |
| 申请人 |
SHARP KABUSHIKI KAISHA;CHIKAMA YOSHIMASA;NISHIKI HIROHIKO;OHTA YOSHIFUMI;MIZUNO YUUJI;HARA TAKESHI;NAKAGAWA OKIFUMI;AITA TETSUYA;SUZUKI MASAHIKO;TAKEI MICHIKO;HARUMOTO YOSHIYUKI;NAKAGAWA KAZUO |
发明人 |
CHIKAMA YOSHIMASA;NISHIKI HIROHIKO;OHTA YOSHIFUMI;MIZUNO YUUJI;HARA TAKESHI;NAKAGAWA OKIFUMI;AITA TETSUYA;SUZUKI MASAHIKO;TAKEI MICHIKO;HARUMOTO YOSHIYUKI;NAKAGAWA KAZUO |
| 分类号 |
H01L29/786;G02F1/1368;G09F9/30 |
主分类号 |
H01L29/786 |
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