| 摘要 |
<p>Disclosed is a semiconductor element (100), which is provided with: a silicon carbide layer (102); a first conductivity type source region (104) disposed in the silicon carbide layer; a second conductivity type body region (103) disposed at a position in contact with the source region (104), said position being in the silicon carbide layer; a second conductivity type contact region (105) formed in the body region; a first conductivity type drift region (102d) disposed in the silicon carbide layer; and a source electrode (109) in ohmic-contact with the source region (104) and the contact region (105). The side wall of the source electrode (109) is in contact with the source region (104), the lower surface of the source electrode (109) is in contact with the contact region (105) but not in contact with the source region (104), and at least a part of the source region (104) overlaps the contact region (105) when viewed from the direction perpendicular to the main surface of a substrate (101).</p> |
