| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device for a butting contact is provided to obtain a robust structure to a butting contact by minimizing a silicon nitride based film. CONSTITUTION: A first spacer layer(510) is formed on a semiconductor substrate. The part of a first spacer layer is removed by performing a wet etching process and a dry etching process. A spacer is formed on the sidewall of a gate electrode by performing a dry etching process after a second spacer layer(520) is deposited. A silicide is formed after an LDD structure is formed by a high density ion implantation process. After an etching stop layer(90) and a PMD layer are deposited, a butting contact is formed by a photolithography process and an etching process.
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