| 摘要 |
<p>A semiconductor light emitting device that includes a first conductive type semiconductor layer (113), a first electrode (131), a insulating layer (150), and an electrode layer (119). The first electrode (131) has at least one branch on the first conductive type semiconductor layer (113). The insulating layer (150) is disposed on the first electrode (131). The electrode layer (119) is disposed on the insulating layer (150).</p> |
