发明名称 |
Block contact architectures for nanoscale channel transistors |
摘要 |
A contact architecture for nanoscale channel devices having contact structures coupling to and extending between source or drain regions of a device having a plurality of parallel semiconductor bodies. The contact structures being able to contact parallel semiconductor bodies having sub-lithographic pitch. |
申请公布号 |
GB2442379(B) |
申请公布日期 |
2011.03.09 |
申请号 |
GB20070024762 |
申请日期 |
2006.06.29 |
申请人 |
INTEL CORPORATION |
发明人 |
MARKO RADOSAVLJEVIC;AMLAN MAJUMDAR;BRIAN S DOYLE;JACK KAVALIEROS;MARK L DOCZY;JUSTIN BRASK;UDAY SHAH;SUMAN DATTA;ROBERT S CHAU |
分类号 |
H01L29/786;H01L21/336;H01L29/417 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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