发明名称 Multiple phase change materials in an integrated circuit for system on a chip application
摘要 An Integrated circuit includes a plurality of memory cells on a substrate, in which a first set of memory cells uses a first memory material, and a second set of memory cells uses a second memory material. The first and second memory materials have different properties such that the first and second sets of memory cells have different operational memory characteristics, such as switching speeds, retention and endurance.
申请公布号 US7903457(B2) 申请公布日期 2011.03.08
申请号 US20080194243 申请日期 2008.08.19
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 LUNG HSIANG-LAN
分类号 G11C11/00 主分类号 G11C11/00
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